Electronic structure of defected trilayer graphene

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dc.contributor.author Jaskólski, Włodzimierz
dc.date.accessioned 2021-12-10T20:15:10Z
dc.date.available 2021-12-10T20:15:10Z
dc.date.issued 2021-12-10
dc.identifier.other https://doi.org/10.1080/00268976.2021.2013554
dc.identifier.uri http://repozytorium.umk.pl/handle/item/6668
dc.description Wersja opublikowana DOI: https://doi.org/10.1080/00268976.2021.2013554
dc.description.abstract Gated trilayer graphene shows energy gap and three topologically protected gaplessstates when the stacking order changes from ABC to CBA. Here we such a trilayer, but with a part of the internal layer cut and removed forming a region in trilayer built of only two not connected single graphene layers. We demonstrate that the electronic structure of this region is almost the same as of the gated trilayer. Curiously, the topological gapless states that appear due to difference in the stacking order of the adjacent trilayers localize mostly in these single graphene layers. Thus, strong disorder in the internal layer of gated trilayer graphene does not lead to destruction of its fundamental electronic properties.
dc.language.iso eng
dc.subject graphene
dc.subject topological states
dc.subject multilayer graphene
dc.subject defects in graphene
dc.title Electronic structure of defected trilayer graphene
dc.type info:eu-repo/semantics/preprint

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