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Determination of the Exciton Binding Energy Using Photothermal and Photoluminescence Spectroscopy

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dc.contributor.author Strzałkowski, Karol
dc.contributor.author Zakrzewski, Jacek
dc.contributor.author Maliński, Mirosław
dc.date.accessioned 2017-03-01T09:39:50Z
dc.date.available 2017-03-01T09:39:50Z
dc.date.issued 2013
dc.identifier.citation Int. J. Thermophys. 34 (2013), pp. 691 - 700
dc.identifier.issn 1572-9567
dc.identifier.other DOI 10.1007/s10765-012-1382-y
dc.identifier.uri http://repozytorium.umk.pl/handle/item/4093
dc.description.abstract In this paper, experimental photoluminescence(PL) andpiezoelectricphotothermal (PPT) spectra of selected II–VI binary crystals are presented and analyzed. The quantitative analysis of the photothermal spectra was performed using a modified and extended Jackson–Amer model. The values of the bandgap energies of investigated semiconductors were computed from the PT amplitude and phase spectra. From the temperature dependence of the exciton emission so-called “excitonic energy gaps” have been determined. It follows from the theory that the exciton binding energy is the difference of these two values of energy gaps derived from PPT and PL spectroscopy.
dc.language.iso eng
dc.publisher Springer
dc.rights info:eu-repo/semantics/openAccess
dc.subject A2B6
dc.subject Binary crystals
dc.subject Exciton binding energy
dc.subject Piezoelectric detection
dc.subject Semiconductors
dc.title Determination of the Exciton Binding Energy Using Photothermal and Photoluminescence Spectroscopy
dc.type info:eu-repo/semantics/article


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