Determination of the Exciton Binding Energy Using Photothermal and Photoluminescence Spectroscopy

dc.contributor.authorStrzałkowski, Karol
dc.contributor.authorZakrzewski, Jacek
dc.contributor.authorMaliński, Mirosław
dc.date.accessioned2017-03-01T09:39:50Z
dc.date.available2017-03-01T09:39:50Z
dc.date.issued2013
dc.description.abstractIn this paper, experimental photoluminescence(PL) andpiezoelectricphotothermal (PPT) spectra of selected II–VI binary crystals are presented and analyzed. The quantitative analysis of the photothermal spectra was performed using a modified and extended Jackson–Amer model. The values of the bandgap energies of investigated semiconductors were computed from the PT amplitude and phase spectra. From the temperature dependence of the exciton emission so-called “excitonic energy gaps” have been determined. It follows from the theory that the exciton binding energy is the difference of these two values of energy gaps derived from PPT and PL spectroscopy.pl
dc.identifier.citationInt. J. Thermophys. 34 (2013), pp. 691 - 700pl
dc.identifier.issn1572-9567
dc.identifier.otherDOI 10.1007/s10765-012-1382-y
dc.identifier.urihttp://repozytorium.umk.pl/handle/item/4093
dc.language.isoengpl
dc.publisherSpringerpl
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectA2B6pl
dc.subjectBinary crystalspl
dc.subjectExciton binding energypl
dc.subjectPiezoelectric detectionpl
dc.subjectSemiconductorspl
dc.titleDetermination of the Exciton Binding Energy Using Photothermal and Photoluminescence Spectroscopypl
dc.typeinfo:eu-repo/semantics/articlepl

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