Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

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dc.contributor.authorPelc, Marta
dc.contributor.authorJaskólski, Włodzimierz
dc.contributor.authorAyuela, Andres
dc.contributor.authorChico, Leonor
dc.date.accessioned2017-03-06T09:48:55Z
dc.date.available2017-03-06T09:48:55Z
dc.date.issued2013
dc.identifier.citationActa Physica Polonica A No. 5 (124), 2013, pp. 777 - 780pl
dc.identifier.issn1898-794X
dc.identifier.otherhttp://dx.doi.org/10.12693/APhysPolA.124.777
dc.identifier.urihttp://repozytorium.umk.pl/handle/item/4101
dc.language.isoengpl
dc.rightsCC0 1.0 Universal*
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectgraphenepl
dc.subjecttopological defectspl
dc.titleOctagonal Defects as the Source of Gap States in Graphene Semiconducting Structurespl
dc.typeinfo:eu-repo/semantics/articlepl

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