Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

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dc.contributor.authorJaskólski, Włodzimierz
dc.contributor.authorPelc, Marta
dc.contributor.authorBryant, Garnett
dc.contributor.authorChico, Leonor
dc.contributor.authorAyuela, Andres
dc.date.accessioned2018-02-05T13:51:18Z
dc.date.available2018-02-05T13:51:18Z
dc.date.issued2018-01-24
dc.identifier.citation2D Materials vol. 5, 2018, pp. 025006-025017pl
dc.identifier.urihttp://repozytorium.umk.pl/handle/item/4883
dc.language.isoengpl
dc.publisherIOPpl
dc.rightsCC0 1.0 Universal*
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectgrafenpl
dc.subjectspintronikapl
dc.subjectizolatory topologicznepl
dc.titleControlling the layer localization of gapless states in bilayer graphene with a gate voltagepl
dc.typeinfo:eu-repo/semantics/articlepl

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