Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si

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dc.contributor.author Makowski, Michał
dc.contributor.author Drozdowski, Winicjusz
dc.contributor.author Witkowski, Marcin E.
dc.contributor.author Wojtowicz, Andrzej J.
dc.contributor.author Irmscher, Klaus
dc.contributor.author Schewski, Robert
dc.contributor.author Galazka, Zbigniew
dc.date.accessioned 2019-08-27T10:29:09Z
dc.date.available 2019-08-27T10:29:09Z
dc.date.issued 2019
dc.identifier.citation Optical Materials Express Vol. 9, No. 9,1 September 2019
dc.identifier.issn 2159-3930
dc.identifier.other 10.1364/OME.9.003738
dc.identifier.uri http://repozytorium.umk.pl/handle/item/5949
dc.description.abstract Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga2O3 at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga2O3 significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga2O3 a very fast scintillator under γ-excitation.
dc.description.sponsorship Narodowe Centrum Nauki (2016/23/G/ST5/04048); Deutsche Forschungsgemeinschaft (GA 2057/2-1)
dc.language.iso eng
dc.rights Attribution-NonCommercial-NoDerivs 3.0 Poland
dc.rights info:eu-repo/semantics/openAccess
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/pl/
dc.subject beta-Ga2O3; semiconductor; scintillator; scintillation yield; scintillation time profiles
dc.title Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si
dc.type info:eu-repo/semantics/article

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