Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si
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Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga2O3 at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga2O3 significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga2O3 a very fast scintillator under γ-excitation.
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beta-Ga2O3; semiconductor; scintillator; scintillation yield; scintillation time profiles
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Optical Materials Express Vol. 9, No. 9,1 September 2019
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Except where otherwised noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Poland