Abstract:
In this work a complete thermal characterization of Cd1-x-yZnxMgxSe mixed crystals was carried out. Bulk semiconductors under investigation were grown from the melt by a high pressure modified Bridgman method for different x and y content. The photopyroelectric method in the back configuration (BPPE) and the infrared (IR) lock-in thermography have been applied to measure values of the thermal diffusivity. Thermal effusivity of the samples was obtained with the PPE technique in the front configuration (FPPE), coupled with a thickness (TWRC-thermal wave resonator cavity) scanning procedure. Measured thermal effusivity together with the thermal diffusivity allowed calculating the thermal conductivity of the investigated materials. For the calculation of the specific heat the densities of the samples were estimated from their weight and geometry. The effect of Mg/Zn content ratio on thermal properties of this quaternary CdZnMgSe compounds was analyzed and discussed.
