Abstrakt:
In this paper, a complete thermal characterization (measurement of all static and dynamic thermal parameters) of some selected II-VI binary crystals was carried out. The semiconductors under investigation were grown from the melt by high-pressure/high-temperature modified Bridgman method. The contact photopyroelectric (PPE) method in back configuration (BPPE) and non-contact infrared lock-in thermography technique were used in order to get the thermal diffusivity of the investigated crystals. The thermal effusivity of the samples was obtained by using the PPE technique in the front configuration (FPPE), together with the thermal wave resonator cavity (TWRC) method. Knowing the values of the thermal effusivity and thermal diffusivity, the remaining two thermal parameters, i.e., thermal conductivity and specific heat were calculated.
